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HiPerFET TM Power MOSFETs
ISOPLUS247 TM
(Electrically Isolated Back Surface)
IXFR 50N50
IXFR 55N50
V DSS I D25
500 V 43 A
500 V 48 A
t rr ≤ 250 ns
R DS(on)
100 m ?
90 m ?
Single Die MOSFET
Symbol
Test Conditions
Maximum Ratings
ISOPLUS 247 TM
V DSS
V DGR
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GS = 1 M ?
500
500
V
V
V GS
V GSM
I D25
Continuous
Transient
T C = 25 ° C
50N50
± 20
± 30
43
V
V
A
G
D
Isolated back surface*
I DM
I AR
E AR
E AS
T C = 25 ° C, Pulse width limited by T JM
T C = 25 ° C
T C = 25 ° C
T C = 25 ° C
55N50
50N50
55N50
50N50
55N50
48
200
220
50
55
60
3
A
A
A
A
A
mJ
J
G = Gate D = Drain
S = Source
* Patent pending
Features
dv/dt
P D
T J
T JM
T stg
T L
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS
T J ≤ 150 ° C, R G = 2 ?
T C = 25 ° C
1.6 mm (0.063 in.) from case for 10 s
5
400
-40 ... +150
150
-40 ... +150
300
V/ns
W
° C
° C
° C
° C
l
l
l
l
l
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low drain to tab capacitance(<50pF)
Low R DS (on) HDMOS TM process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
V ISOL
50/60 Hz, RMS
t = 1 min
2500
V~
l
Fast intrinsic Rectifier
Weight
5
g
Applications
l
DC-DC converters
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
l
l
Battery chargers
Switched-mode and resonant-mode
power supplies
V DSS
V GS(th)
V GS = 0 V, I D = 1mA
V DS = V GS , I D = 8mA
500
2.5
V
4.5 V
l
l
DC choppers
AC motor control
I GSS
V GS = ± 20 V, V DS = 0
± 200 nA
Advantages
I DSS
R DS(on)
V DS = V DSS
V GS = 0 V
V GS = 10 V, I D = I T
Note 1
T J = 25 ° C
T J = 125 ° C
50N50
55N50
25 μ A
2 mA
100 m ?
90 m ?
l
l
l
Easy assembly
Space savings
High power density
? 2002 IXYS All rights reserved
98588B (04/02)
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